发明名称 |
Short channel trenched DMOS transistor |
摘要 |
A DMOS transistor having a trenched gate is formed in a substrate such that the P body region of the transistor may be formed heavier or deeper while still maintaining a "short" channel. This is accomplished by forming a portion of the N+ type source region within the P body region prior to forming the trench, followed by a second implantation and diffusion of a relatively shallow extension of the N+ source region formed overlying a part of the P body region. The increased depth or doping concentration of the P body region advantageously lowers the resistance of the P body region, while the short channel lowers the on-resistance of the transistor for improved performance.
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申请公布号 |
US5341011(A) |
申请公布日期 |
1994.08.23 |
申请号 |
US19930031798 |
申请日期 |
1993.03.15 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
HSHIEH, FWU-IUAN;CHANG, MIKE F.;YILMAZ, HAMZA |
分类号 |
H01L21/336;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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