发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To reduce the difference of a power source level which an output signal goes to a ground level caused by the power source rising time of a power source applying signal by connecting a resistor to a power source in parallel with electric field effect transistors being series-connected. CONSTITUTION:In a circuit generating the power source inputting signal PON by connecting P channel MOS transistors Q1 and Q2 in series, connecting them to ground via a resistor R1 and applying the voltage on a node N1 to an inverter I1, a resistor R2 is connected between the node N1 and the power source. In this constitution of the circuit, the level on the node N1 becomes the divided level by resistors R1 and R2 to be a constant value. Thus, the difference of the power source level which the output signal PON goes to the ground level can be reduced regardless the rising at the time of power source applying.</p>
申请公布号 JPH06236678(A) 申请公布日期 1994.08.23
申请号 JP19930020926 申请日期 1993.02.09
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 MAESAKO ISATO
分类号 G06F1/26;G11C5/00;G11C11/401;G11C11/407;G11C11/413;G11C16/06;G11C17/00;G11C17/12;H03K17/22;(IPC1-7):G11C5/00 主分类号 G06F1/26
代理机构 代理人
主权项
地址