Inverse delta-doping for improved open circuit voltage of solar cells or photo diodes

摘要

A solar cell or photo diode has an n-type semiconductor layer and a p-type semiconductor layer which form a pn-junction at the metallurgical interface of the layers. A thin sheet of undoped semiconductor is located at the interface or the lower doped layer. The sheet has less recombination centers than its adjacent regions and prevents cross-doping of donors and acceptors from the n- and p-side by cross-diffusion to increase the open circuit voltage and fill-factor of the solar cells or photo diode.