Semiconductor device and manufacturing method thereof

摘要

A gate electrode of a P-channel MOS transistor and a gate electrode of an N-channel MOS transistor which constitute a logic section, a gate electrode of an N-channel MOS transistor and a capacitor electrode which constitute a memory cell section are formed by patterning a first layer of polysilicon, so that the semiconductor device can be manufactured in a considerably simplified process as an SRAM, while taking advantage of the large capacity of a DRAM thereby to improve the yield.