发明名称 |
Method of making planar heterobipolar transistor having trenched isolation of the collector terminal |
摘要 |
A planar heterobipolar transistor and its methods for manufacture provide that the transistor has the base-emitter region separated from the collector terminal by a collector parting trench and the parting trench structure may be used to separate the transistor from adjoining function components.
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申请公布号 |
US5340755(A) |
申请公布日期 |
1994.08.23 |
申请号 |
US19920912271 |
申请日期 |
1992.10.13 |
申请人 |
SIEMENS AKTIEGENSELLSCHAFT |
发明人 |
ZWICKNAGL, HANS-PETER;HOEPFNER, JOACHIM;SCHLEICHER, LOTHAR |
分类号 |
H01L21/28;H01L21/331;H01L29/737;(IPC1-7):H01L21/265;H01L29/70 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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