发明名称 THIN FILM INTERCONNECTION CIRCUIT AND MANUFACTURE THEREOF
摘要 <p>PURPOSE: To solve the problem of palladium residues after the etching of a titanium layer and the lift-off of a palladium layer in conventional Ti-Pd-Cu-Ni- Au metallization, by using a titanium-palladium alloy layer comprizing a specific wt.% of palladium. CONSTITUTION: A Ti layer 12, a TiPd alloy layer 13 containing 0.3-14 wt.% of Pd, and a thin copper film 14 are deposited on an insulating board 1, and a photoresist is deposited on the surface of this thin copper film, and the copper surface is exposed by patterning. After that, an Ni layer 15 is electroplated, and gold 16 of the same pattern is electroplated simultaneously. By making a compound material of a metal layer having a composition of Ti-Ti-Pd-Cu-Ni- Au in this way, etching of an TiPd alloy by HF becomes feasible, and it becomes possible to prevent Pd residues from remaining after the etching of the Ti layer 12 and the lift-off of the Pd layer 13 in Ti-Pd-Cu-Ni-Au metallization in an example by conventional technique.</p>
申请公布号 JPH06237057(A) 申请公布日期 1994.08.23
申请号 JP19930288775 申请日期 1993.10.26
申请人 AMERICAN TELEPH & TELEGR CO <ATT> 发明人 ROBAATO EMU FURANKENTAARU;AJIBORA OO IBIDEYUUNI;DENISU RAIRU KURAUSU
分类号 H01L21/28;H01L21/52;H01L21/768;H01L23/12;H01L23/498;H01L23/522;H01L27/01;H05K1/09;H05K3/06;H05K3/10;H05K3/24;H05K3/38;H05K3/40;(IPC1-7):H05K1/09;H01L21/90 主分类号 H01L21/28
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