SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The gate oxide layer of NMOS transistor is composed of ONO complex layer and the gate oxide layer of PMOS transistor is composed of an oxide layer. The method comprises the steps of: (A) forming N-well and P-well on a substrate; (B) forming a first oxide layer, a second nitride layer, and a third oxide layer; and (C) removing a second nitride layer and a third oxide layer on a NMOS region.