HIGH-VOLTAGE SEMICONDUCTOR DEVICE WITH WELL COMPENSATION LAYER

摘要

The high voltage semiconductor device has a high density narrow well layer to provide a high break down voltage and punch through voltage. The high voltage semiconductor device includes a substrate (10) of a first conduction type; a well region (12) of negative conduction polarity to a first conduction type, a first conduction type source region (19) and drain region (20) depositing on the well region (20), semiconductor regions (17,18) having a lower density than the source and the drain regions (19,20), and well compensating layers (15,16) of the same conduction type as the well region (12) but of a lower density than the well region.