发明名称 DETECTING METHOD FOR ABNORMAL DISCHARGE AND PLASMA DEVICE
摘要 <p>PURPOSE:To detect presence or absence of abnormal discharge which is generated in a treatment chamber of a plasma device and its generation part. CONSTITUTION:The device for treating a semiconductor wafer W which is placed at an electrostatic chuck 21 by generating plasma in a treatment chamber 1 by a high-frequency power supply 8 is provided with a current monitor 77 for detecting DC voltage for operating the electrostatic chuck 21 and a VDC monitor 74 for detecting the VDC level from a power supply line 11 of the high- frequency power supply 8. The monitor signal from each monitor is compared and processed by a detection device 75, thus detecting presence or absence of abnormal discharge and its generation part according to comparison processing by a detection device 75 even if the fluctuation width etc. of each monitor signal differs depending on the generation part of abnormal discharge.</p>
申请公布号 JPH06232089(A) 申请公布日期 1994.08.19
申请号 JP19930034255 申请日期 1993.01.29
申请人 TOKYO ELECTRON LTD 发明人 DEGUCHI YOICHI;KAWAKAMI SATOSHI
分类号 C23C16/50;C23F4/00;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;H05H1/46;(IPC1-7):H01L21/302 主分类号 C23C16/50
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