发明名称 |
DETECTING METHOD FOR ABNORMAL DISCHARGE AND PLASMA DEVICE |
摘要 |
<p>PURPOSE:To detect presence or absence of abnormal discharge which is generated in a treatment chamber of a plasma device and its generation part. CONSTITUTION:The device for treating a semiconductor wafer W which is placed at an electrostatic chuck 21 by generating plasma in a treatment chamber 1 by a high-frequency power supply 8 is provided with a current monitor 77 for detecting DC voltage for operating the electrostatic chuck 21 and a VDC monitor 74 for detecting the VDC level from a power supply line 11 of the high- frequency power supply 8. The monitor signal from each monitor is compared and processed by a detection device 75, thus detecting presence or absence of abnormal discharge and its generation part according to comparison processing by a detection device 75 even if the fluctuation width etc. of each monitor signal differs depending on the generation part of abnormal discharge.</p> |
申请公布号 |
JPH06232089(A) |
申请公布日期 |
1994.08.19 |
申请号 |
JP19930034255 |
申请日期 |
1993.01.29 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
DEGUCHI YOICHI;KAWAKAMI SATOSHI |
分类号 |
C23C16/50;C23F4/00;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;H05H1/46;(IPC1-7):H01L21/302 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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