| 摘要 |
PURPOSE:To form a pattern which is excellent in both resolution and throughput by forming a resist film on a substrate and exposing the resist film to ionizing radiation in the atmosphere of a reactive gas atmosphere so that the resist can be decomposed and evaporated upon being exposed to the radiation. CONSTITUTION:The method uses silicon, a silicon compound, or a high polymer containing polysilane, a sulfonyl group, and silicon, a metal, or metallic compound which is decomposed and evaporated upon being exposed to ionizing radiation, such as X rays, ultraviolet rays, electron beams, etc., as a resist 12. By using the resist 12, a resist film 13 is formed on a substrate 11 directly or one or more layers of laminated materials in between. Then the film 13 is exposed to the ionizing radiation 26 in the atmosphere of an inert gas or its radical, ions, or plasma so as to accelerate the decomposition and evaporation of the resist 12. When this method is used, the occurrence of shape deterioration, such as the stripping off, tilting, swelling, etc., of the resist 12 can be reduced. |
