| 摘要 |
PURPOSE:To realize the improvement of an ESD strength and an LU strength by a method wherein a resistor, an inductor, a capacitor and a diode are respectively mounted on inner leads and ESD protective circuits and LU generation preventive circuits are respectively formed on the inner leads. CONSTITUTION:Insulating sheet 9 is respectively jointed to the surfaces of inner leads 5, a single components of a resistor 1, an inductor 2, a capacitor 3 or a diode 4 or a semiconductor chip 10, including an ESD protective circuit and an LU generation preventive circuit, is mounted on the sheet 9 and the ESD protective circuit and the LU generation preventive circuit are constituted. Thereby, the improvement of an ESD resistance and an LU resistance can be realized. Moreover, by constituting respectively the ESD protective circuit and the LU generation preventive circuit on the inner lead parts and the inner leads miniaturization of the chip 10 and an increase in the integration degree the chip 10 can be realized because there is no need to form the ESD protective circuit and the LU generation preventive circuit in the interior of the semiconductor chip. |
