SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a semiconductor device with a resistive thin film which can be formed at a low temperature even after an Al electrode is formed in a field plate used for the relaxation of a surface electric field. CONSTITUTION:A field plate is formed of a resistive thin film 11 made of the silicon nitride of excess Si formed by a reactive sputtering method for a silicon target by using the mixed gas of nitrogen and argon. Further, thereon is formed a final protective film of an insulating thin film 12 made of Si3N4 which can be continuously formed exclusively by changing the mixing ratio of mixed gas.