| 摘要 |
<p>PURPOSE:To provide a semiconductor device in which the resistance of a wiring can be reduced by forming a gate electrode in th structure of a complex layer in which a layer made of pure aluminum is arranged under an aluminum layer to which a metal of high melting point is added. CONSTITUTION:An aluminum film 2 is formed on a glass substrate 1, and thereon is so formed by a direct-current sputtering method as to be overlapped an aluminum film 3' to which tantalum of 2 atomic % a high-melting-point metal is added, and then the work of photolithographic technique is applied thereto to form a gate electrode G of a first conductive layer. The whole of the aluminum layer 3' is anodized to form an oxide aluminum gate insulating layer 3 for an insulating layer, and then a second gate insulating film 4, an amorphous silicon semiconductor layer 5 and an amorphous silicon semiconductor layer 6 containing phosphorus are sequentially formed. Therefore, since the first semiconductor layer is covered with an insulating film containing an anodizable high-melting-point metal as an impurity in aluminum, a hillock can be prevented, so that the increase of the resistance of a wiring may be controlled.</p> |
