| 摘要 |
PURPOSE: To easily realize a semiconductor device containing quantum-thin line or quantum dot by growing a non-dope hetero-junction structure on a semi- insulating substrate, and implanting a pattern of dopant ions. CONSTITUTION: On an MBA device, a semi-insulating GaAs substrate 1 is set, and a non-dope GaAs channel layer 2 is grown on the substrate for growing an non-dope AlxGa1-x As layer, so that a GaAs/AlxGa1-x As hetero-junction structure is formed. The substrate 1 is moved and set in an FIB device through a vacuum transportation channel, and an n-type or P-type dopant ion beam 5 is implanted as a line or dot in a quantum-thin line or a quantum dot formation scheduled region, so that an n-type electron-supplying region 6 or p-type positive hole supplying region 6' are formed. Thus, with a thermal process for activating impurities, one-dimensional or zero-dimensional electron gas 8 is generated in the non-dope GaAs channel layer 2 to constitute a quantum-thin line, thus actualizing a device. |
