| 摘要 |
PURPOSE:To form a photovoltaic element continuously at a high speed without variability and irregularity especially in a large area and also to form a two- layer tandem type photovoltaic element having a high efficiency and low deterioration. CONSTITUTION:This is a photovoltaic element, its forming method and its forming equipment comprising a first conductivity type, n-type, layer 902A (or p-type layer) by RF, an i-type layer 903 by microwave, an i-type layer 904A by RF, a p-type layer 905A (or n-type layer) which is a conductivity type opposite to the first conductivity type by plasma doping, an n-type layer 902B (or p-type layer) which is the first conductivity type by RF, an i-type layer 904B by RF, and a conductivity type 905B opposite to the first conductivity type by plasma doping. |
