发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To obtain a ZnS film not causing cracking, having high adhesive strength to an optical substrate and hard to scratch by forming a thin ZnS film on the surface of the optical substrate while irradiating the substrate with electron beams. CONSTITUTION:An Si substrate as an optical substrate transmitting IR is held by a substrate holder 3 so that it, confronts an evaporating source 2 and an electron gun 4 in a vacuum deposition vessel 1. This vessel 1 is evacuated and a ZnS film is formed on the unheated substrate fitted to the holder 3 in a prescribed optical thickness by depositing ZnS evaporated from the evaporating source 2 on the substrate at the prescribed rate of deposition while irradiating the substrate with electron beams from the electron gun 4. Since ZnS is irradiated with electron beams during film formation, internal stress is relaxed like the case of ion beam assisted deposition, cracking is inhibited and adhesive strength is enhanced.
申请公布号 JPH06230202(A) 申请公布日期 1994.08.19
申请号 JP19930017246 申请日期 1993.02.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MARUYAMA KENJI;OGURA TOSHIAKI
分类号 G02B1/11;G02B1/10;G02B1/12 主分类号 G02B1/11
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