| 摘要 |
PURPOSE:To form a capacitor of large capacitance by a simple process. CONSTITUTION:A polycrystalline silicon layer 9 turning to a lower electrode 10 of a capacitor constituting at least a part of a memory cell is formed on a substrate 1, and subjected to heat treatment in an atmosphere which contains chlorine based elements and oxygen is zero or thin. After that, an upper electrode 12 is formed on the lower electrode 10, via a charge storage layer 11. That is, when the polycrystalline silicon layer 9 is heat-treated in an atmosphere which contains chlorine based elements and oxygen is zero or thin, the surface of the polycrystalline silicon layer 9 is turned into a finely uneven state, and the surface area is increased. By forming the charge storage layer 11 and the upper electrode 12 on the uneven surface, the capacitor capacitance is increased. |
