| 摘要 |
PURPOSE:To provide a method by which an unnecessary ion-implanted resist film picture on a semiconductor substrate can be erased during the course of manufacturing a semiconductor integrated circuit device. CONSTITUTION:When the method is used, a resist film picture on a substrate is removed by sticking an adhesive sheet, etc., to the upper surface of the picture and performing a heating process, to be concrete, by irradiating the picture with microwaves of 2.45 GHz in frequency so as to scatter the water contained in the sheet etc., and/or on the surface of the picture, and then, peeling the sheet, etc., from the semiconductor substrate together with the resist film picture. |
