| 摘要 |
<p>PURPOSE: To embed a contact hole, having a size of a half-micron or less by forming an insulating film having a recess on a semiconductor wafer, embedding the recess into a CVD metallic layer having a smooth surface and forming a metallic layer on the CVD metallic layer by a sputtering process. CONSTITUTION: An impurity doping region 32 is formed on a surface of a semiconductor substrate 31, an insulating film 33 of borophosphosilicate glass(BPSG) is formed on the doping region, and an antidiffusion film 35 is formed on an inner wall of a contact hole, on an exposed surface of the semiconductor substrate and on the insulating film 33. A nucleus generation active layer 36 is formed on the antidiffusion film 5, the contact hole is embedded with a CVD metallic layer 37a having a smooth surface, a reliable sputtering metallic layer 39 is formed on an intermediate layer 38, and finally an antireflection film 40 is formed on the sputter metallic layer 39. Thereby a contact hole, having a size of a half-micron or less, can be embedded.</p> |
