MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To activate impurity atoms and to make crystallization uniform silicon film with impurities to a specific temperature and then applying pulse laser beams to it. CONSTITUTION:A gate insulation film 14 is formed by covering an island-shaped crystallizability silicon film 13 formed on a substrate 11. Gate electrode parts 15 and 16 are formed on the gate insulation film 14. Then, with the gate electrode parts 15 and 16 as masks, phosphor or boron is introduced into the crystallizability silicon film 13 and then pulse laser beams are applied while the substrate 11 is heated above 100 deg.C, preferably to 100-500 deg.C, thus partially absorbing input/output of energy due to application of laser and achieving a gradual temperature change as compared with a case without heating and hence stabilizing the positions of impurities within a silicon crystal.