| 摘要 |
PURPOSE:To accurately and easily measure distortion in a crystal and with a high position resolution. CONSTITUTION:The diffraction X-ray intensity curve of a sample crystal 6 is measured by using the optical system of an X-ray topography, the part of the low-angle side is approximated by an exponential function, and then the original diffraction X-ray intensity curve is plotted again by using the logarithmic function which is the inverse function of the function, thus enabling the relationship between the X-ray incidence angle and the change in the diffraction X-ray intensity to be linear. Then, the change rate of the change in the diffraction X-ray intensity which is linear to the X-ray incidence angle is obtained from the inclination of the plotted curve and then two constituents (DELTAd/d, DELTAalpha) of distortion in a sample crystal 6 are obtained by calculated using the change rate. An X-ray topography optical system where a crystal for enlarging an X-ray image is laid out at the later stage of the sample crystal 6 is used to enhance the position resolution for measuring distortion. |
