| 摘要 |
<p>PURPOSE:To decrease shorting defects, such as continuous bright points, to entirely eliminate crosstalks and to improve a display grade by increasing of transmitted light quantity by connecting lower wirings and upper wirings via contact holes provided in insulating films. CONSTITUTION:A chromium film is formed by a sputtering method on a substrate and the source-drain electrode lower wiring 2 in addition to the conventional gate electrode wiring 1 is formed by a photolithography method. The source-drain electrode lower wiring 2 is provided between the gate electrode wiring 1 so as not to come into contact with the gate electrode wiring 1 in this case. Semiconductor film 3 is then patterned and formed by the photolithography method and further, the insulating film in contact hole 4 part is removed by dry etching using gas. The source-drain electrode upper wiring 5, display electrode 6 and passivation film are successively patterned and formed by the photolithography method to produce the TFT substrate. The upper wiring 5 and lower wiring 2 of the source-drain electrode are connected to each other via the contact hole 4 at this time.</p> |
