| 摘要 |
PURPOSE:To form a capacitor element by forming an upper electrode so as to sandwich a capacitor dielectric film between a gate electrode as the lower electrode and the upper electrode, and etching at the same time the upper elec trode and the capacitor dielectric film, in the case of gate etching. CONSTITUTION:After a connection hole 5b is formed in a part of a gate oxide film 9, and a conducting layer as a first layer of poly silicon or the like is deposited on the whole surface of a wafer, a silicon oxide film is deposited for forming a capacitor dielectric film 20. A polycrystalline silicon film which is a first conducting layer for forming the upper electrode 17 of a capacitor element is deposited. A second conducting layer, a dielectric layer, and the first conducting layer are patterned so as to obtain the same form by photolithography and dry etching, and gate electrodes 1a, 1c are constituted. Since an upper capacitor element is formed on the whole surface of the gate electrode, the area of a capacitor element can be increased by about 20-40% as compared with the conventional device. |
