| 摘要 |
PURPOSE:To provide the electron beam lithographic equipment capable of mechanically moving and aligning a transfer mask which decreases thermal deformation stresses and prevents electrification and a transfer mask which is formed into a larger size in order to increase the number of the pattern regions to be mounted. CONSTITUTION:The thermal deformation stresses are decreased by forming the pattern regions 1a to 1p of the transfer mask 1 within circular recessed parts and uniformly making thermal stresses act on these circular recessed parts. Conductive thin films are formed on both surfaces of the transfer mask 1 and are grounded, thereby the electrification of the transfer mask 1 is prevented and the strains of the electron beam loci by the electrification are removed. Further, the alignment of the transfer mask 1 formed into the larger size is mechanically executed by providing the electron beam lithographic equipment with a mask stage for moving the transfer mask. |
