| 摘要 |
PURPOSE:To improve the strength of the liquid crystal element formed by using semiconductor elements consisting of single crystal Si. CONSTITUTION:A single crystal Si layer produced by epitaxial growth on porous Si is stuck to an Si substrate 1 having an SiO2 layer formed on its surface and after the porous Si is etched away, necessary circuits, such as semiconductor elements 3 and wirings, are built to constitute a driving electrode substrate. A liquid crystal cell holding a liquid crystal 6 with this substrate and a counter electrode substrate 4 between them is assembled; thereafter, the Si substrate 1 which is the supporting substrate of the driving electrode substrate is etched away and a glass substrate 7 provided with light shielding layers 8 is stuck thereto to support the liquid crystal cell. |
