发明名称 |
DENSE, SELF-SINTERED SILICON CARBIDE/CARBON-GRAPHITE COMPOSITE AND PROCESS FOR PRODUCING SAME |
摘要 |
A dense, self-sintered silicon carbide/carbon-graphite composite material and a process for producing the composite material is disclosed. The composite material comprises a silicon carbide matrix, between 2 and 30 percent by weight carbon-graphite, and small amounts of sintering aids such as boron and free carbon. The silicon carbide has an average grain size between 2 and 15 mu m, and the carbon-graphite has an average grain size between 10 and 75 mu m, the average grain size of the carbon-graphite being greater than the average grain size of the silicon carbide. The composite material has a density of at least 80 percent of theoretical density as determined by the rule of mixtures for a composite material. This density is achieved with minimal microcracking at a high graphite loading with large graphite particles. The composite material exhibits good lubricity and wear characteristics, resulting in improved tribological performance. The process for producing the composite material uses a carbon-bonded graphite comprising at least 5 percent by weight carbon-precursor binder. |
申请公布号 |
WO9418141(A1) |
申请公布日期 |
1994.08.18 |
申请号 |
WO1994US01273 |
申请日期 |
1994.02.04 |
申请人 |
THE STACKPOLE CORPORATION |
发明人 |
CHEN, XIN, E.;PFAFF, MARK, E. |
分类号 |
C04B35/532;C04B35/565;C04B35/626;C04B38/06;C04B41/50;F27D1/00;(IPC1-7):C04B35/52;C04B35/54;F27B9/04;F27B9/10;C04B35/56 |
主分类号 |
C04B35/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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