发明名称 VACUUM FILM FORMING METHOD AND APPARATUS THEREFOR
摘要 <p>This invention aims at providing a vacuum film forming apparatus not requiring substrate temperature varying heating and cooling chambers and capable of carrying out the controlling of the temperature of a substrate in minimal time, reducing the cost of manufacturing the apparatus, miniaturizing the apparatus and greatly improving the productivity. A carry-in and carry-out chamber (21), a transfer chamber (24), a first film formation chamber (26), a second film formation chamber (29) and a heating chamber (32) are provided via gate valves (22, 23, 25, 28, 31) respectively. In order to form a film continuously under different processing conditions, time to evacuate the first and second film formation chambers (26, 29) after the formation of a film, time to transfer matrix array substrate from the first film formation chamber (26) to the second film formation chamber (29) by a substrate transfer means, pressure in the transfer chamber, vacuum stand-by time prior to the formation of film and time to regulate the pressure of a material gas introduced into the apparatus before the formation of film are set to optimum levels. A film is formed by setting each film formation pressure to an optimum level, and the controlling of the temperature of a substrate is done in minimal time without requiring substrate temperature varying heating and cooling chambers.</p>
申请公布号 WO1994018358(P1) 申请公布日期 1994.08.18
申请号 JP1994000171 申请日期 1994.02.04
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