| 发明名称 |
BURIED-RIDGE II-VI LASER DIODE AND METHOD OF FABRICATION |
| 摘要 |
A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge. |
| 申请公布号 |
WO9418730(A1) |
申请公布日期 |
1994.08.18 |
| 申请号 |
WO1994US01104 |
申请日期 |
1994.01.18 |
| 申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY |
发明人 |
HAASE, MICHAEL, A.;QIU, JUN;CHENG, HWA;DEPUYDT, JAMES, M. |
| 分类号 |
H01S5/00;H01L29/45;H01L33/00;H01L33/14;H01L33/28;H01L33/38;H01L33/40;H01S5/042;H01S5/22;H01S5/223;H01S5/30;H01S5/327;H01S5/34;H01S5/347 |
主分类号 |
H01S5/00 |
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