| 摘要 |
<p>There is described the formation of a silicon thin film semiconductor device at a low temperature. An aluminum film, as gate electrode (11), is formed selectively on glass substrate (10), made of Corning 7059. Then, gate oxide film (12) is formed on gate electrode (11) in the following manner. A reaction gas, which is created by mixing a mixed gas which was made by bubbling heated triethoxysilane at 45 °C with nitrogen at flow rate of 2.0 liter/min. and 7.5 liter of ozone concentration 4.5 % oxygen with diluting nitrogen gas at 18 liter/min., is lead to the surface of glass substrate (10) which is heated to 250 degrees C to make these gases react with each other to form a silicon oxide film, gate oxide film (12). Amorphous silicon film (13) is formed onto the gate oxide film. A silicon film, channel passivation film (14) is formed onto the amorphous silicon film in the same manner as above. Source electrode (15) and drain electrode (16) are formed from an aluminum film or the like. Due to the low temperature formation of the silicon oxide film, high reliability of the glass substrate and amorphous silicon film is maintained.</p> |
