Method for depositing a total surface (covering) layer through a mask and optional closure of this mask

摘要

By deposition from different directions through a mask, a layer can be applied under this mask over the total surface last. The mask is in this case separated in the coating region from the background by a cavity and is firmly attached thereto outside the coating region. This method is particularly advantageous for the SGFET (suspended gate field effect transistor) used as a gas sensor. In this case, the mask also forms the gate and the sensitive layer is not exposed to any other process after the deposition. The mask can afterwards be left open or be closed by depositing a sufficient quantity for the openings in the mask to be laterally covered over, or by depositing an additional layer under a shallow angle. This method is also suitable for the production of micromechanical diaphragms.