| 摘要 |
PURPOSE:To prevent elements of PFP structure from breaking because of leakage current to semiconducting films at the time of high temperature, and to cause them to have voltage enduring properties similar to those of RESURF structure and conventional RFP structure. CONSTITUTION:A P<+>-type main base diffusion layer 13a is provided in an N<->- type epitaxial layer 12, and a P<->-type extension base diffusion layer 13b, jointed to the main base diffusion layer 13a and having density lower than that of the diffusion layer 13a, is provided. And an N<+>-type equipotential channel stopper diffusion layer 14 is provided at a specified interval with this diffusion layer 13b. And an anode electrode 20 is provided on the diffusion layer 13a, and a cathode electrode 21 is provided on the diffusion layer 14. Besides, a field oxide film 15 is provided between the anode electrode 20 and the cathode electrode 21, and a plurality of SIPOSes 16 isolated from one another are provided on this oxide film 15. Accordingly, it becomes possible to prevent the element from breaking because of leakage current to a semiconducting film at the time of high temperature, and cause it to have a voltage enduring property similar to conventional semiconductor devices. |
