PROCESS FOR DEPOSITING A THIN LAYER ON A SUBSTRATE USING A REMOTE COLD NITROGEN PLASMA

摘要

A method for applying a thin film to a metal, organic or inorganic substrate (12), wherein a remote cold nitrogen plasma essentially consisting of free nitrogen atoms is produced in an enclosure (5) housing said substrate (12). To form passivation layers, a gaseous organosilica or germanium compound containing CH, Si (or Ge), O or NH groups is fed into said enclosure (5) during the formation of the remote nitrogen plasma. To form dielectric thin films, organometallic compounds may also be added.