发明名称 Conducting structure prodn. on topography of substrate
摘要 Prodn. of a conducting structure having several pins on the topography of a starting substrate comprises: (a) forming 1st, 2nd and 3rd insulating layers (27,28,29) completely over the topography; (b) patterning and etching an opening (30) in the 3 insulating layers; (c) forming and planarising a conducting layer (31) by filling the opening; (d) creating an etching mask (33) by applying polysilicon having semispherical grain size for pattern transfer; (e) transferring an archipelago pattern over the etching mask onto the planar conducting layer; and (f) forming pins (34) to create the conducting structure having the several pins.
申请公布号 DE4404129(A1) 申请公布日期 1994.08.18
申请号 DE19944404129 申请日期 1994.02.09
申请人 MICRON SEMICONDUCTOR INC., BOISE, ID., US 发明人 DENNISON, CHARLES H., BOISE, ID., US
分类号 H01L21/02;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/72 主分类号 H01L21/02
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