发明名称 |
Conducting structure prodn. on topography of substrate |
摘要 |
Prodn. of a conducting structure having several pins on the topography of a starting substrate comprises: (a) forming 1st, 2nd and 3rd insulating layers (27,28,29) completely over the topography; (b) patterning and etching an opening (30) in the 3 insulating layers; (c) forming and planarising a conducting layer (31) by filling the opening; (d) creating an etching mask (33) by applying polysilicon having semispherical grain size for pattern transfer; (e) transferring an archipelago pattern over the etching mask onto the planar conducting layer; and (f) forming pins (34) to create the conducting structure having the several pins.
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申请公布号 |
DE4404129(A1) |
申请公布日期 |
1994.08.18 |
申请号 |
DE19944404129 |
申请日期 |
1994.02.09 |
申请人 |
MICRON SEMICONDUCTOR INC., BOISE, ID., US |
发明人 |
DENNISON, CHARLES H., BOISE, ID., US |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/72 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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