| 摘要 |
In a method for producing a recessed gate field effect transistor including a recess in a semiconductor substrate and a gate electrode disposed in the recess, a photoresist film is applied to the semiconductor substrate and source and drain electrodes on the substrate, a first insulating film is formed on the photoresist film, a resist pattern, which has an opening for processing the first insulating film and the photoresist film are etched using the resist pattern as a mask to form an opening having a width increasing in the direction of the substrate, a second insulating film is formed on opposite side walls of the opening, the semiconductor substrate is etched using the opening narrowed by the second insulating film in the substrate to form a recess, the second insulating film is selectively removed by etching, gate metal is deposited on the photoresist and on the substrate in the recess, and unnecessary gate metal is removed by lifting-off the resist film.
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