发明名称 |
Method of forming single-crystal semiconductor films |
摘要 |
A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor substrate having a crystal axis transferred from a single-crystal semiconductor substrate is formed on an insulator layer via a seed hole which goes through the insulator layer which is formed on the single-crystal semiconductor substrate, comprises the steps of: forming a non-single-crystal semiconductor substrate connected to a single-crystal semiconductor substrate via a seed hole on an insulator layer; irradiating a compound beam which includes a first energy beam having a power density which is capable of melting a non-single-crystal semiconductor film and a second energy beam having a power density which is not capable of melting the non-single-crystal semiconductor film but capable of softening the insulator layer positioned below the non-single-crystal semiconductor film; and epitaxially growing the single-crystal semiconductor film in such a way that the non-single-crystal semiconductor film is melted and then solidified again by scanning the surface of the non-single-crystal semiconductor film with the compound beam, starting from the seed hole, in such a manner that the first energy beam is irradiated first and the second energy beam is irradiated second.
|
申请公布号 |
US5338388(A) |
申请公布日期 |
1994.08.16 |
申请号 |
US19920877811 |
申请日期 |
1992.05.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SUGAHARA, KAZUYUKI;IPPOSHI, TAKASHI |
分类号 |
H01L21/20;H01L21/762;H01L21/822;(IPC1-7):C30B23/02 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|