发明名称 |
Method of fabricating an ultra-short channel field effect transistor |
摘要 |
An ultra-short channel field effect transistor provides a combination of a shallow junction for injection of carriers into a conduction channel and a Schottky barrier below the shallow junction with a lowered barrier height to reduce the depletion region and punch-through effects. A preferred method of fabricating this structure includes both etching and metal deposition selectively on only semiconductor material, allowing use of only a single patterning step with registration tolerances comparable to channel length while allowing extremely high integration density.
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申请公布号 |
US5338698(A) |
申请公布日期 |
1994.08.16 |
申请号 |
US19920995416 |
申请日期 |
1992.12.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SUBBANNA, SESHADRI |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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