METHOD OF FABRICATING A CAPACITOR FOR SEMICONDUCTOR MEMORY DEVICE

摘要

The method for reducing the trench depth with enough capacitance comprises the steps of: a) forming the trench by etching a substrate (21) through a contact hole (26); b) depositing a second insulation layer (30) with a depth of 1,000-2,000 angstrom on the first one (25); c) etching back the second insulation layer and leaving a side wall spacer (31) on the trench wall; d) growing epitaxial silicon single crystal (32) on the exposed silicon from bottom of the trench; e) forming an n- impurity region (27) for storage electrode on the crystal and inner wall of the trench; and f) patterning the electrode after depositing polysilicon layer (29) for plate electrode on the dielectric and first insulation layers.