Method for enhancing etch uniformity useful in etching submicron nitride features

摘要

An etch process wherein halogen ions are employed to bombard a patterned nitride layer thereby creating substantially vertical sidewalls, especially useful when etching submicron features. A process in which NF3 ions are combined with halogen ions in a reactive ion etcher to etch a patterned layer, followed, in situ, by an overetch of NF3 ions and an ionized hydrogen halide. An inert gas can be added to further increase the uniformity of the etch.