发明名称 |
Thin film transistor with three dimensional multichannel structure |
摘要 |
A thin film transistor gate structure with a three-dimensional multichannel structure is disclosed. The thin film transistor gate structure according to the present invention comprises source/drain electrodes formed so as to be spaced from and opposite to each other on a substrate; semiconductive layers, comprised of a plurality of sub-semiconductive layers, each formed in a row, each end of the sub-semiconductive layers being in ohmic-contact with the source/drain electrodes; gate insulating layers surrounding each of the semiconductive layers; and gate electrodes surrounding each of the gate insulating layers. Accordingly, the whole outerlayers of each sub-semiconductive layer surrounded by the gate electrodes serve as channel regions. As a result, the effective channel area increases, thereby improving the channel conductance and current driving ability.
|
申请公布号 |
US5338959(A) |
申请公布日期 |
1994.08.16 |
申请号 |
US19930040016 |
申请日期 |
1993.03.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, WEONKEUN;KIM, CHULSOO;HAN, JEONGIN |
分类号 |
H01L29/78;H01L21/336;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|