发明名称 Semiconductor memory circuit
摘要 A semiconductor memory circuit includes memory cells each having two storage semiconductor elements. One of these semiconductor elements is made inoperative in response to a first or a second operation control signal. This makes it possible to check the margin of a threshold voltage of the other storage semiconductor element at the time when writing, erasing and reading operations with respect thereto are being performed.
申请公布号 US5339271(A) 申请公布日期 1994.08.16
申请号 US19920846205 申请日期 1992.03.04
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 TANAGAWA, KOUJI
分类号 G11C17/00;G11C8/08;G11C16/04;G11C16/10;G11C16/34;G11C29/00;G11C29/12;G11C29/50;(IPC1-7):G11C7/00 主分类号 G11C17/00
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