发明名称 |
Semiconductor memory circuit |
摘要 |
A semiconductor memory circuit includes memory cells each having two storage semiconductor elements. One of these semiconductor elements is made inoperative in response to a first or a second operation control signal. This makes it possible to check the margin of a threshold voltage of the other storage semiconductor element at the time when writing, erasing and reading operations with respect thereto are being performed.
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申请公布号 |
US5339271(A) |
申请公布日期 |
1994.08.16 |
申请号 |
US19920846205 |
申请日期 |
1992.03.04 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
TANAGAWA, KOUJI |
分类号 |
G11C17/00;G11C8/08;G11C16/04;G11C16/10;G11C16/34;G11C29/00;G11C29/12;G11C29/50;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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