| 摘要 |
A silicon carbide field effect transistor of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the source and base regions comprise substantially monocrystalline silicon carbide formed from recrystallized amorphous silicon carbide, The source and base regions also have vertical sidewalls defining the p-n junction between the source/base and base/drain regions, respectively. The vertical orientation of the sidewalls arises from the respective implantation of electrically inactive ions into the substrate during the amorphizing steps for forming the base region in the drain and for forming the source region in the base region. The electrically inactive ions are selected from the group consisting of silicon, hydrogen, neon, helium, carbon and argon. A gate and gate insulating region are also provided on the face of the substrate above the base region. By applying an appropriate turn-on base signal to the gate, a channel is created in the base region. The channel region electrically connects the source to the drain. The source and base are also electrically connected by a source contact on the face, opposite the portion of the base region wherein the channel is formed.
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