发明名称 RESIN-SEALED SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To lessen a package in warpage as a whole by a method wherein an insulator which induces a warpage in the package is provided onto the surface of the inner lead of a lead frame further from the side face of the package, where a resin-sealed semiconductor device is buried in a sealing resin in such a manner the gap between the upsides of the sealing resin and the semiconductor device is different from that between the undersides of the sealing resin and the semiconductor device. CONSTITUTION:An inner lead 1b is buried nearly at the center of a sealing resin 5 in a thicknesswise direction, and a plate-like rectangular insulator 7 is pasted on the upside of the inner lead 1b through the intermediary of an insulating adhesive agent. In a buried semiconductor chip 3 sealed up with the resin 5, as an upper burial depth S1 is larger than a lower burial depth S2, the upper resin shrinkage stress is higher than the lower shrinkage stress, in result a warpage protruding downward is induced. Then, a warpage protrud ing in the opposite direction is induced in the buried inner lead 16, so that the warpage a of a package can be restrained as small as possible taking advan tage of forces which act in opposed directions.</p>
申请公布号 KR940007378(B1) 申请公布日期 1994.08.16
申请号 KR19910002059 申请日期 1991.02.07
申请人 TOSHIBA CO., LTD. 发明人 KOBAYASHI, KATSUHITO
分类号 H01L23/50;H01L23/28;(IPC1-7):H01L23/28 主分类号 H01L23/50
代理机构 代理人
主权项
地址