METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

The method for forming a capacitor with a simple process comprises the steps of: a) depositing the plate polysilicon layer on the oxide layer for the capacitor; b) forming the defected layer on the polysilicon layer by implanting the ion whose atomic weight is more than 70 with low energy and high density; and c) forming the capacitor electrode by patterning the plate with a polysilicon layer whose edge part on the active region is inclined at an angle of 20-40 degree.