发明名称 |
Microwave energized process for the preparation of high quality semiconductor material |
摘要 |
High quality semiconductor material is deposited in a microwave energized glow discharge deposition process by energizing a process gas with microwave energy at a power level sufficient to generate a plasma at or near the 100% saturation mode and by impeding access of deposition species to the substrate so as to lower the deposition rate to a value less than that otherwise achieved operating at the 100% saturation mode. |
申请公布号 |
AU6229494(A) |
申请公布日期 |
1994.08.15 |
申请号 |
AU19940062294 |
申请日期 |
1994.01.13 |
申请人 |
UNITED SOLAR SYSTEMS CORPORATION |
发明人 |
SUBHENDU GUHA;CHI C YANG;XIXIANG XU |
分类号 |
B05D5/12;C23C16/50;C23C16/511;H01J37/32;H01L21/205 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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