发明名称 LEAD FRAME FOR SEMICONDUCTOR PACKAGE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To improve high frequency characteristic by controlling as much as possible generation of electrical noise such as crosstalk noise. CONSTITUTION:A frame type low dielectric part 11 having a dielectric coefficient lower than that of a resin sealing material is provided on the predetermined region of an inner lead 3, except for a wire bonding part 3a. This low dielectric coefficient part 11 is composed of a low dielectric coefficient material 12 and a non-thermoplastic resin layer 13 formed on the upper and lower surfaces of this low dielectric coefficient material 12. The low dielecric coefficient material 12 covers the front and rear surfaces of the inner lead 3 and fills a gap A between the inner leads 3, 3. Thereby, since a dielectric coefficient between inner leads 3, 3 becomes low, a parasitic capacitance between the leads 3, 3 is reduced to a large extent. Therefore, noise such as crosstalk noise can be reduced and high frequency characteristic can be improved.</p>
申请公布号 JPH06224365(A) 申请公布日期 1994.08.12
申请号 JP19930012475 申请日期 1993.01.28
申请人 DAINIPPON PRINTING CO LTD 发明人 MATSUURA TOMONORI;YAGI HIROSHI
分类号 H01L21/56;H01L23/28;H01L23/50;(IPC1-7):H01L23/50 主分类号 H01L21/56
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