METHOD OF FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a via contact plug formation method utilizing selective CVD tungsten. CONSTITUTION: A first tungsten 14 is evaporated on the lower part of a via contact by executing a hydrogen reduction process at a high temperature, and a 2nd tungsten 16 is evaporated on the surface of the 1st tungsten 14 by executing a SiH4 reduction profess at a low temperature. The via contact is filled with the 1st and 2nd tungsten components to form a contact plug. Consequently, the reduction in the selectively of tungsten can be prevented and a reliable semiconductor device can be attained.