| 摘要 |
PURPOSE: To improve junction breakdown voltage and a leakage current by restrictively forming a high concentration diffused region in a low concentration operation region, formed on a semiconductor substrate. CONSTITUTION: A gate polyoxidation film 4 is formed by oxidizing the sidewall of an exposed gate electrode 3, and after forming an LDD region 5 on an exposed silicon substrate 1 by ion injection of which impurity ion concentration is a low concentration of 1×10<17> to 1×10<19> atoms/cm<3> , a gate sidewall oxidation film of fixed thickness is evaporated. Only an operation region and a pad polysilicon film 10<1> formed on the surface of a spacer oxidation film 6<1> are left by utilizing a pad polysilicon film mask. After etching a remaining pad polysilicon film 10, a heat treatment processing is executed and N<+> /P<+> source and drain, i.e., high concentration ion-implantation region 7, is formed. Consequently, the drop in source-drain junction breakdown voltage and the increment in a leakage current can be prevented.
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