| 摘要 |
PURPOSE: To prevent the generation of cracks on a layer, formed under a bump in a method for forming a bump structure on an integrated semiconductor device. CONSTITUTION: A new photoresist layer 40 is applied to an wafer 10, obtained by successively forming an aluminum pad 14, a passivation layer 18 partially overlapping the pad 14, a thin layer 30 formed over the whole surface, and a gold thin layer 32 and forming a gold layer 38 by electroplating gold only on a region over the pad 14, masked and exposed to light, the exposed part is removed and an aperture part 42 is left in the remaining photoresist layer 40. The wafer 10 is electroplated by gold again, to form an upper side gold bump part 44. The resist layer 40 is removed, and the overall gold layer 32 converting the wafer and the barrier layer 30 are removed by etching to leave a final bump. In the case of lead adhesive, compression force to be transmitted by the bump part 44 is hardly transmitted to the passivation layer 18, so that cracks are not generated. |
