发明名称 PRODUCTION OF THIN FILM TRANSISTOR MATRIX
摘要 <p>PURPOSE:To obtain a substrate for a TFT matrix system LCD which is low in cost and does not degrade TFT characteristics from mixing of impurities in liquid crystal. CONSTITUTION:In a glass substrate for the TFT matrix system LCD, a soda lime glass substrate 1 covered with a transparent insulating protective film 2 at one side or both sides of the glass substrate surface is used, the transparent insulating protective film 2 is formed by ALD method, the transparent insulating protective films 2 are simultaneously formed on both sides of the soda lime glass substrate 1 by ALD method. Further, after forming a gate electrode 3 on the soda lime glass substrate 1 covered with the transparent insulating protective films 2, a transparent insulating film is formed as a gate insulating film 4 by ALD method and the transparent insulating film is also formed by ALD method for a final protective film 12.</p>
申请公布号 JPH06222388(A) 申请公布日期 1994.08.12
申请号 JP19930012065 申请日期 1993.01.28
申请人 FUJITSU LTD 发明人 KOSUGI KIYOHISA;WATABE JUNICHI;SHIROKI IKUO
分类号 G02F1/136;G02F1/1368;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):G02F1/136;H01L29/784 主分类号 G02F1/136
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