| 摘要 |
PURPOSE:To provide a solid-state image sensor of small chip size capable of producing quality images and adapted to increasing picture elements. CONSTITUTION:N-type photodetector sections 9 are formed in a p-type semiconductor substrate 8, which has scribe lines 10 and bonding pads 11 near them. On the substrate, there are sequentially formed an insulating film 14, transfer electrodes 13, an opaque metal layer 15, and a protective layer 16. Transparent fillings 17 are provided above the photodetector sections 9. The transparent fillings 17 and the protective layer 16 are covered with a flat, transparent layer 18. The flat transparent layer 18 and the transparent fillings 17 are made of thermally-cured positive photosensitive material. Color filters 19R, 19G and 19B of red, green and blue are formed on the transparent layer 18. |
